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2SA880
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2SA880

SKU: 2SA880
2SA880 Transistor Silicon PNP CASE: SOT33 MAKE: Matsushita Electronics
Datasheet
2SA880 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT33
Manufacturer Matsushita Electronics
Vbr CBO 35
Vbr CEO 35
Max. PD (W) 150m
Derate (Amb) (W/°C) 1.5m
hfe 1.0k=
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 125
@Ic (A) 2.0m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 700
SKU 394792
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