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2SA900
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2SA900

SKU: 2SA900
2SA900 Transistor Silicon PNP CASE: TO126 MAKE: Matsushita Electronics
Datasheet
2SA900 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer Matsushita Electronics
Vbr CBO 20
Vbr CEO 18
Max. PD (W) 1.2
Derate (Amb) (W/°C) 9.6m
Max. hFE 470
Min hFE 90
Ic Max. (A) 2.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 200M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 4 W
Maximum Collector-Base Voltage |Vcb| 18 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 90
SKU 80579
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