The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SA911
View detailed images (13)

2SA911

SKU: 2SA911
2SA911 Transistor Silicon PNP CASE: TO39 MAKE: Sony
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer Sony
Vbr CBO 850
Vbr CEO 550
Max. PD (W) 8.0
Derate (Amb) (W/°C) 84m
t(f) Max. (S) 850n
Max. hFE 300
Min hFE 30
Ic Max. (A) 100m
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Tr Max. (s) 500n
R(sat) (Û) 300
Trans. Freq (Hz) Min. 9.0M
Oper. Temp (°C) Max. 125
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.47 W
Maximum Collector-Base Voltage |Vcb| 850 V
Maximum Collector-Emitter Voltage |Vce| 850 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 16 pF
Transition Frequency (ft): 9 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 579185
Back