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2SA912
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2SA912

SKU: 2SA912
2SA912 Transistor Silicon PNP CASE: TO92 MAKE: Matsushita Electronics
Datasheet
2SA912 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer Matsushita Electronics
Vbr CBO 150
Vbr CEO 150
Max. PD (W) 750m
Derate (Amb) (W/°C) 6.9m
hfe 150
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 135
@Ic (A) 10m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.75 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 150
SKU 343308
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