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2SA967
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2SA967

SKU: 2SA967
2SA967 Transistor Silicon PNP CASE: TO220 MAKE: Toshiba
Datasheet
2SA967 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Toshiba
Vbr CBO 15
@Freq. (test) 1.0G
@Ic (A) 3.0m
@Ic (A) 5.0m
Mat. Silicon Logic
Noise Fig. 3.5
Oper. Gain Typ (S21) 9.5
f(osc) Max. (Hz) 4.0G
Polarity PNP
PD Max. (W) 150m
S11 Deg. (Typ) -174
S11 Mag Typ. .367
S22 Deg. Typ. -40
S22 Mag Typ. .450
@VDS (VCE) (test) (V) 10
Coll. (or drain) Current Max. 30m
@Freq. (test) 1.0G
@VCE (test) 5.0
Oper. Temp (°C) Max. 125
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 8 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 0.8 pF
Transition Frequency (ft): 4000 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 343315
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