Weight |
0.01 kg
|
Case |
TO220 |
Type |
Transistor Silicon PNP |
Manufacturer |
Toshiba |
Vbr CBO |
160 |
Vbr CEO |
160 |
Max. PD (W) |
25 |
Derate (Amb) (W/°C) |
200m |
Max. hFE |
240 |
Min hFE |
70 |
Ic Max. (A) |
1.5 |
@Ic (test) (A) |
100m |
Icbo Max. @Vcb Max. (A) |
1.0u |
Polarity |
PNP |
Trans. Freq (Hz) Min. |
100M |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
5.0 |
Pinout Equivalence Number |
3-15 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
25 W |
Maximum Collector-Base Voltage |Vcb| |
160 V |
Maximum Collector-Emitter Voltage |Vce| |
160 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
1.5 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Collector Capacitance (Cc) |
30 pF |
Transition Frequency (ft): |
100 MHz |
Forward Current Transfer Ratio (hFE), MIN |
70 |
SKU |
80593 |