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2SB1000
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2SB1000

SKU: 2SB1000
2SB1000 Transistor Silicon PNP CASE: SOT89 MAKE: Hitachi
Datasheet
2SB1000 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT89
Manufacturer Hitachi
Vbr CBO 25
Vbr CEO 20
Max. PD (W) 1.0
Min hFE 85
Ic Max. (A) 1
Icbo Max. @Vcb Max. (A) 0.1u
@Temp. (test) (°C) 50
VRRM 1.0k
Polarity PNP
1-Cycle Surge Current (A) 50
@Temp. (test) for Vf) 25
Vf Max. 1.0
Ir @25°C 10u
I(out) (If AVG) Max. 2.0
Trans. Freq (Hz) Min. 350M
@Volts (test) (V) 1.0k
@If (test) 1.0
Oper. Temp (°C) Max. 150
@VCE (V) 20i
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 165 °C
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN 140
SKU 343325
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