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2SB1001
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2SB1001

SKU: 2SB1001
2SB1001 Transistor Silicon PNP CASE: SP0 MAKE: Hitachi
Datasheet
2SB1001 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SP0
Manufacturer Hitachi
Vbr CBO 20
Vbr CEO 16
Max. PD (W) 1.0
Min hFE 100
Ic Max. (A) 2.0
@Ic (test) (A) 0
Icbo Max. @Vcb Max. (A) 0.1u
Polarity PNP
Trans. Freq (Hz) Min. 80M
Oper. Temp (°C) Max. 150
@VCE (V) 16
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 165 °C
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 140
SKU 343327
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