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2SB1026
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2SB1026

SKU: 2SB1026
2SB1026 Transistor Silicon PNP CASE: SP0 MAKE: Hitachi
Datasheet
2SB1026 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SP0
Manufacturer Hitachi
Vbr CBO 120
Vbr CEO 100
Max. PD (W) 1.0
Min hFE 60
Ic Max. (A) 1
@Ic (test) (A) 0
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 140M
Oper. Temp (°C) Max. 150
@VCE (V) 100
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN 110
SKU 343338
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