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2SB1036
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2SB1036

SKU: 2SB1036
2SB1036 Transistor Silicon PNP CASE: SOT33 MAKE: Matsushita Electronics
Datasheet
2SB1036 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT33
Manufacturer Matsushita Electronics
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 300m
Derate (Amb) (W/°C) 3.0m
hfe 700=
Ic Max. (A) 20m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 125
@Ic (A) 2.0m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 0.02 A
Max. Operating Junction Temperature (Tj) 185 °C
Forward Current Transfer Ratio (hFE), MIN 200
SKU 343347
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