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2SB1057
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2SB1057

SKU: 2SB1057
2SB1057 Transistor Silicon PNP CASE: SOT199 MAKE: Matsushita Electronics
Datasheet
2SB1057 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT199
Manufacturer Matsushita Electronics
Vbr CBO 150
Vbr CEO 150
Max. PD (W) 100
Derate (Amb) (W/°C) 800m
Max. hFE 200
Min hFE 40
Ic Max. (A) 9.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 20M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 130 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 9 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 120
SKU 343353
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