The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB1110D
View detailed images (13)

2SB1110D

SKU: 2SB1110D
2SB1110D Transistor Silicon PNP CASE: TO126 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer Hitachi
Polarity PNP
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 5.5 pF
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 160
SKU 1422346
Back