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2SB1125
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2SB1125

SKU: 2SB1125
2SB1125 Transistor Silicon PNP Darlington CASE: SOT89 MAKE: Sanyo Semiconductor
Datasheet
2SB1125 Datasheet
Product specifications
Type Transistor Silicon PNP Darlington
Case SOT89
Manufacturer Sanyo Semiconductor
Vbr CEO 50
Max. PD (W) 500m
Min hFE 3.0k
Ic Max. (A) 700m
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Mat. Silicon Logic
Polarity PNP
Trans. Freq (Hz) Min. 170M
@VCE (test) 2.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-1
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.7 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 9 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 5
SMD Transistor Code BH
SKU 343387
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