The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB1189
View detailed images (12)

2SB1189

SKU: 2SB1189
2SB1189 Transistor Silicon PNP CASE: SOT89 MAKE: Rohm Semiconductor
Datasheet
2SB1189 Datasheet
Product specifications
Equivalent 2SB1189R
Type Transistor Silicon PNP
Case SOT89
Manufacturer Rohm Semiconductor
Vbr CEO 80
Max. PD (W) 500m
Max. hFE 390
Min hFE 82
Ic Max. (A) 700m
Polarity PNP
Trans. Freq (Hz) Min. 100M
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.7 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 82
SMD Transistor Code BDP_BDQ_BDR
SKU 343408
Back