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2SB1189R
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2SB1189R

SKU: 2SB1189R
2SB1189R Transistor Silicon PNP CASE: SOT89 MAKE: Rohm Semiconductor
Product specifications
Equivalent 2SB1189
Type Transistor Silicon PNP
Case SOT89
Manufacturer Rohm Semiconductor
Vbr CEO 80
Max. PD (W) 500m
Max. hFE 390
Min hFE 82
Ic Max. (A) 700m
Polarity PNP
Trans. Freq (Hz) Min. 100M
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.7 A
Max. Operating Junction Temperature (Tj) 195 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 180
SMD Transistor Code BDP_BDQ_BDR
SKU 568504
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