2SB119

SKU: 2SB119

2SB119 Transistor Germanium PNP CASE: TO3 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Equivalent	2SB119A
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Matsushita Electronics
Vbr CBO	32
Vbr CEO	16
Min hFE	6.0
Ic Max. (A)	3.0
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	.20m
Polarity	PNP
Derate Above 25°C	588m
Trans. Freq (Hz) Min.	200k
Oper. Temp (°C) Max.	75
@VCE (V)	1.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	32 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	75 °C
Transition Frequency (ft):	0.1 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	549752

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