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2SB1207
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2SB1207

SKU: 2SB1207
2SB1207 Transistor Silicon PNP CASE: TO92 MAKE: Matsushita Electronics
Datasheet
2SB1207 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer Matsushita Electronics
Vbr CBO 15
Vbr CEO 10
Max. PD (W) 300m
C(ob) (F) 22p
Derate (Amb) (W/°C) 2.4m
hfe 100
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 90M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 150
@Ic (A) 500m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 9 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 160 °C
Forward Current Transfer Ratio (hFE), MIN 150
SKU 343416
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