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2SB1208
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2SB1208

SKU: 2SB1208
2SB1208 Transistor Silicon PNP CASE: SOT89 MAKE: Matsushita Electronics
Datasheet
2SB1208 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT89
Manufacturer Matsushita Electronics
Vbr CBO 20
Vbr CEO 20
Max. PD (W) 1.0
Derate (Amb) (W/°C) 8.0m
Min hFE 70
Ic Max. (A) 2.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 120M-
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 165 °C
Forward Current Transfer Ratio (hFE), MIN 140
SMD Transistor Code K
SKU 550265
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