The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB1218A
View detailed images (5)

2SB1218A

SKU: 2SB1218A
2SB1218A Transistor Silicon PNP CASE: SOT23 MAKE: Matsushita Electronics
Datasheet
2SB1218A Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer Matsushita Electronics
Vbr CBO 45
Vbr CEO 45
Max. PD (W) 150m
C(ob) (F) 2.7p
Derate (Amb) (W/°C) 1.2m
hfe 160
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 20M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 2.0m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Emitter-Base Voltage |Veb| 9 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 195 °C
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code B
SKU 343421
Back