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2SB122
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2SB122

SKU: 2SB122
2SB122 Transistor Germanium PNP CASE: TO3 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Toshiba
Vbr CBO 80
Max. hFE 110
Min hFE 34
Ic Max. (A) 1.5
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity PNP
R(sat) (Û) .15
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 250k
Oper. Temp (°C) Max. 75
@VCE (V) 1.5i
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Emitter-Base Voltage |Veb| 40 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 584629
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