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2SB1221
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2SB1221

SKU: 2SB1221
2SB1221 Transistor Silicon PNP CASE: TO92 MAKE: Matsushita Electronics
Datasheet
2SB1221 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer Matsushita Electronics
Vbr CBO 250
Vbr CEO 200
Max. PD (W) 1.0
Derate (Amb) (W/°C) 8.0m
Max. hFE 220
Min hFE 30
Ic Max. (A) 70m
@Ic (test) (A) 5.0m
Icbo Max. @Vcb Max. (A) 2.0u
Polarity PNP
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 150
@VCE (V) 10
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 250 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.07 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 160
SKU 116519
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