The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB130
View detailed images (12)

2SB130

SKU: 2SB130
2SB130 Transistor Germanium PNP CASE: SOT9 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case SOT9
Manufacturer Matsushita Electronics
Vbr CBO 32
Vbr CEO 16
Min hFE 20-
Ic Max. (A) 1.5
@Ic (test) (A) 1.5
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Derate Above 25°C 133m
Oper. Temp (°C) Max. 75
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 6 W
Maximum Collector-Base Voltage |Vcb| 32 V
Maximum Collector-Emitter Voltage |Vce| 16 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.7 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 394837
Back