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2SB1321A
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2SB1321A

SKU: 2SB1321A
2SB1321A Transistor Silicon PNP CASE: MT1 MAKE: Generic
Datasheet
2SB1321A Datasheet
Product specifications
Type Transistor Silicon PNP
Case MT1
Manufacturer Panasonic
Vbr CBO 60
Vbr CEO 50
Max. PD (W) 600m
C(ob) (F) 15p
Derate (Amb) (W/°C) 4.8m
hfe 120
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 40M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 10m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 85
SKU 343473
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