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2SB1386
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2SB1386

SKU: 2SB1386
2SB1386 Transistor Silicon PNP CASE: SP0 MAKE: Rohm Semiconductor
Datasheet
2SB1386 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SP0
Manufacturer Rohm Semiconductor
Vbr CEO 20
Max. PD (W) 2.0
Max. hFE 390
Min hFE 82
Ic Max. (A) 10
@Ic (test) (A) 500m
Polarity PNP
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 160
SKU 343487
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