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2SB177
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2SB177

SKU: 2SB177
2SB177 Transistor Germanium PNP CASE: TO1 MAKE: Matsushita Electronics
Datasheet
2SB177 Datasheet
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Matsushita Electronics
Vbr CBO 60
Max. PD (W) 125m
Derate (Amb) (W/°C) 2.5m
hfe 65
Ic Max. (A) 125m
Icbo Max. @Vcb Max. (A) 12u
Polarity PNP
Trans. Freq (Hz) Min. 900k
Oper. Temp (°C) Max. 75
@Ic (A) 300m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.125 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.125 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN 65
SKU 343628
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