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2SB181
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2SB181

SKU: 2SB181
2SB181 Transistor Germanium PNP CASE: TO8 MAKE: Fujitsu
Product specifications
Equivalent 2SB181A
Type Transistor Germanium PNP
Case TO8
Manufacturer Fujitsu
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 5.5
Max. hFE 150
Min hFE 20
Ic Max. (A) 500m
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0m
Polarity PNP
Derate Above 25°C 85m
Trans. Freq (Hz) Min. 13k
Oper. Temp (°C) Max. 100
@VCE (V) 1.5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 13 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 540064
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