2SB181A

SKU: 2SB181A

2SB181A Transistor Germanium PNP CASE: TO8 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Equivalent	2SB181
Type	Transistor Germanium PNP
Case	TO8
Manufacturer	Fujitsu
Vbr CBO	60
Vbr CEO	40
Max. PD (W)	12
Max. hFE	150
Min hFE	25
Ic Max. (A)	500m
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	200u
Polarity	PNP
Derate Above 25°C	185m
Trans. Freq (Hz) Min.	13k
Oper. Temp (°C) Max.	100
@VCE (V)	1.5
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	12 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	0.2 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	540297

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