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2SB258
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2SB258

SKU: 2SB258
2SB258 Transistor Germanium PNP CASE: TO36 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO36
Manufacturer Toshiba
Vbr CBO 120
Max. PD (W) 60
Max. hFE 280
Min hFE 38
Ic Max. (A) 15
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 3.5m
Polarity PNP
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 1.5M
Oper. Temp (°C) Max. 75
@VCE (V) 1.5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.7 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 584638
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