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2SB261
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2SB261

SKU: 2SB261
2SB261 Transistor Germanium PNP CASE: TO1 MAKE: Fujitsu
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Fujitsu
Vbr CBO 20
Vbr CEO 15
Max. PD (W) 65m
Derate (Amb) (W/°C) 1.1m
hfe 45
Ic Max. (A) 30m
Icbo Max. @Vcb Max. (A) 12u
Polarity PNP
Trans. Freq (Hz) Min. 2.5M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.065 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 45
SKU 767282
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