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2SB276
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2SB276

SKU: 2SB276
2SB276 Transistor Germanium PNP CASE: TO3 MAKE: Hitachi
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Hitachi
Vbr CBO 120
Vbr CEO 105
Max. PD (W) 12
Min hFE 35-
Ic Max. (A) 10
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Derate Above 25°C 185m
Trans. Freq (Hz) Min. 1.0k
Oper. Temp (°C) Max. 100
@VCE (V) 1.2
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 12 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 105 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 542438
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