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2SB296
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2SB296

SKU: 2SB296
2SB296 Transistor Germanium PNP CASE: TO3 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Toshiba
Vbr CBO 160
Vbr CEO 160
Max. PD (W) 30
Max. hFE 200
Min hFE 25
Ic Max. (A) 10
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 330u
Polarity PNP
R(sat) (Û) 150m
Derate Above 25°C 714m
Trans. Freq (Hz) Min. 1.5M
Oper. Temp (°C) Max. 75
@VCE (V) 1.5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 160 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.7 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 584646
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