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2SB325
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2SB325

SKU: 2SB325
2SB325 Transistor Germanium PNP CASE: R57 MAKE: Fujitsu
Product specifications
Type Transistor Germanium PNP
Case R57
Manufacturer Fujitsu
Vbr CBO 120
Vbr CEO 100
Max. PD (W) 1.8
Max. hFE 250
Min hFE 20
Ic Max. (A) 600m
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 20u
Polarity PNP
Derate Above 25°C 30m
Oper. Temp (°C) Max. 100
@VCE (V) 2.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1.8 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 50 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 85 °C
Forward Current Transfer Ratio (hFE), MIN 20
SKU 767265
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