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2SB357
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2SB357

SKU: 2SB357
2SB357 Transistor Germanium PNP CASE: TO3 MAKE: Mitsubishi
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Mitsubishi
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 15
Max. hFE 120-
Min hFE 20-
Ic Max. (A) 1.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Derate Above 25°C 250m
Oper. Temp (°C) Max. 100
@VCE (V) 1.5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 85 °C
Forward Current Transfer Ratio (hFE), MIN 20
SKU 767240
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