| 2SB367 Datasheet |
| Equivalent | 2SB367H | |
| Type | Transistor Germanium PNP | |
| Case | SOT9 | |
| Manufacturer | Hitachi | |
| Vbr CBO | 25 | |
| Vbr CEO | 25 | |
| Max. PD (W) | 4.0 | |
| Max. hFE | 170 | |
| Min hFE | 45 | |
| Ic Max. (A) | 1.0 | |
| @Ic (test) (A) | 500m | |
| Icbo Max. @Vcb Max. (A) | 100u | |
| Polarity | PNP | |
| R(sat) (Û) | 240m- | |
| Derate Above 25°C | 66m | |
| Trans. Freq (Hz) Min. | 500k | |
| Oper. Temp (°C) Max. | 100 | |
| @VCE (V) | 1.5 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 4 W | |
| Maximum Collector-Base Voltage |Vcb| | 25 V | |
| Maximum Collector-Emitter Voltage |Vce| | 20 V | |
| Maximum Emitter-Base Voltage |Veb| | 12 V | |
| Maximum Collector Current |Ic max| | 1 A | |
| Max. Operating Junction Temperature (Tj) | 85 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 100 | |
| SKU | 343629 | |