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2SB410AF
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2SB410AF

SKU: 2SB410AF
2SB410AF Transistor Germanium PNP CASE: TO3 MAKE: Sanyo Semiconductor
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Sanyo Semiconductor
Vbr CBO 55
Max. PD (W) 40
Max. hFE 275
Min hFE 27-
Ic Max. (A) 15
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 250u
Polarity PNP
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 85
@VCE (V) 1.5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 135 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 11 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 27
SKU 572306
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