2SB426

SKU: 2SB426

2SB426 Transistor Germanium PNP CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Equivalent	2SB426A
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Toshiba
Vbr CBO	32
Vbr CEO	32
Max. PD (W)	30
Max. hFE	80
Min hFE	34
Ic Max. (A)	7.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	160u
Polarity	PNP
Derate Above 25°C	500m
Trans. Freq (Hz) Min.	400k
Oper. Temp (°C) Max.	100
@VCE (V)	1.5
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	32 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	0.18 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	606244

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