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2SB430
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2SB430

SKU: 2SB430
2SB430 Transistor Germanium PNP CASE: TO36 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case TO36
Manufacturer Matsushita Electronics
Vbr CBO 70
Max. PD (W) 80
Min hFE 10
Ic Max. (A) 20
@Ic (test) (A) 20
Icbo Max. @Vcb Max. (A) 20m
Polarity PNP
Derate Above 25°C 1.3
Trans. Freq (Hz) Min. 10k
Oper. Temp (°C) Max. 100#
@VCE (V) 0i
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 549783
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