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2SB458
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2SB458

SKU: 2SB458
2SB458 Transistor Germanium PNP CASE: SOT9 MAKE: Mitsubishi
Product specifications
Equivalent 2SB458B
Type Transistor Germanium PNP
Case SOT9
Manufacturer Mitsubishi
Vbr CBO 25
Vbr CEO 25
Max. PD (W) 800m
Derate (Amb) (W/°C) 13m
hfe 28
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
@VCE (test) (V) 1.5
Oper. Temp (°C) Max. 100
@Ic (A) 500m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 4 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 85 °C
Forward Current Transfer Ratio (hFE), MIN 28
SKU 551991
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