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2SB464
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2SB464

SKU: 2SB464
2SB464 Transistor Germanium PNP CASE: TO3 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Toshiba
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 30
Max. hFE 170
Min hFE 30
Ic Max. (A) 6.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 330u
Polarity PNP
R(sat) (Û) 60m
Derate Above 25°C 500m
Trans. Freq (Hz) Min. 1.6M
Oper. Temp (°C) Max. 100
@VCE (V) 1.5
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.7 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 584657
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