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2SB470
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2SB470

SKU: 2SB470
2SB470 Transistor Germanium PNP CASE: TO1 MAKE: Fujitsu
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Fujitsu
Vbr CBO 25
Vbr CEO 18
Max. PD (W) 80m
Derate (Amb) (W/°C) 1.2m
hfe 160
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 6.0u
Polarity PNP
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.08 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 85 °C
Forward Current Transfer Ratio (hFE), MIN 160
SKU 540081
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