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2SB476S
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2SB476S

SKU: 2SB476S
2SB476S Transistor Germanium PNP CASE: TO39 MAKE: Matsushita Electronics
Datasheet
2SB476S Datasheet
Product specifications
Type Transistor Germanium PNP
Case TO39
Manufacturer Matsushita Electronics
Vbr CBO 20
Vbr CEO 10
Max. PD (W) 250m
Derate (Amb) (W/°C) 3.8m
hfe 80
Ic Max. (A) 2.0
Icbo Max. @Vcb Max. (A) 500u
Polarity PNP
Trans. Freq (Hz) Min. 1.2M
@VCE (test) (V) 0i
Oper. Temp (°C) Max. 100
@Ic (A) 2.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 10 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 343632
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