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2SB493
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2SB493

SKU: 2SB493
2SB493 Transistor Germanium PNP CASE: TO8 MAKE: Matsushita Electronics
Datasheet
2SB493 Datasheet
Product specifications
Equivalent 2SB493W
Type Transistor Germanium PNP
Case TO8
Manufacturer Matsushita Electronics
Vbr CBO 40
Vbr CEO 20
Max. PD (W) 9.0
Min hFE 40
Ic Max. (A) 5.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity PNP
Derate Above 25°C 139m
Trans. Freq (Hz) Min. 300k
Oper. Temp (°C) Max. 100
@VCE (V) 0i
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 9 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.3 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 343634
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