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2SB493W
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2SB493W

SKU: 2SB493W
2SB493W Transistor Germanium PNP CASE: TO8 MAKE: Matsushita Electronics
Product specifications
Equivalent 2SB493
Type Transistor Germanium PNP
Case TO8
Manufacturer Matsushita Electronics
Vbr CBO 40
Vbr CEO 20
Max. PD (W) 9.0
Min hFE 60
Ic Max. (A) 5.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity PNP
Derate Above 25°C 139m
Trans. Freq (Hz) Min. 300k
Oper. Temp (°C) Max. 100
@VCE (V) 0i
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 9 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.3 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 550411
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