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2SB533
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2SB533

SKU: 2SB533
2SB533 Transistor Germanium PNP CASE: TO39 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case TO39
Manufacturer Matsushita Electronics
Vbr CBO 20
Vbr CEO 10
Max. PD (W) 250m
Derate (Amb) (W/°C) 4.2m
hfe 75
Ic Max. (A) 2.0
Icbo Max. @Vcb Max. (A) 200u
Polarity PNP
Trans. Freq (Hz) Min. 1.2M
@VCE (test) (V) 0i
Oper. Temp (°C) Max. 100
@Ic (A) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 6 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 10 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 75
SKU 549786
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