2SB557

SKU: 2SB557

2SB557 Transistor Silicon PNP CASE: TO3 MAKE: Toshiba

Price:

£5.75 Inc. VAT (£4.79 Ex. VAT)

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Datasheet

2SB557 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	2SB557S
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	Toshiba
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	80
Derate (Amb) (W/°C)	640m
Max. hFE	140
Min hFE	40
Ic Max. (A)	8.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	PNP
Trans. Freq (Hz) Min.	7.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	80 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	8 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	500 pF
Transition Frequency (ft):	4 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	83930

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