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2SB600
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2SB600

SKU: 2SB600
2SB600 Transistor Silicon PNP - CASE: TO3 MAKE: NEC
Price: £11.99
+ VAT 20% for UK purchases
£11.99
Qty
+ VAT 20% for UK purchases
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Product specifications
Case TO3
Type Transistor Silicon PNP
Manufacturer NEC
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 200
Derate (Amb) (W/°C) 1.6
Max. hFE 200
Min hFE 40
Ic Max. (A) 15
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 100u
@Temp. (test) (°C) 50
VRRM 600
Polarity PNP
R(sat) (Û) 300m
1-Cycle Surge Current (A) 50
@Temp. (test) for Vf) 25
Vf Max. 1.0
Ir @25°C 10u
I(out) (If AVG) Max. 2.0
Trans. Freq (Hz) Min. 4.0M
@Volts (test) (V) 600
@If (test) 1.0
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 80722
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