The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB612

2SB612

SKU: 2SB612
2SB612 Transistor Silicon PNP CASE: TO3 MAKE: Hitachi
Price:
£23.99 Inc. VAT (£19.99 Ex. VAT)
£23.99 Inc. VAT (£19.99 Ex. VAT)
Qty
  • More pieces shipped in 14 days
?
Datasheet
2SB612 Datasheet
Product specifications
Equivalent 2SB612A
Type Transistor Silicon PNP
Case TO3
Manufacturer Hitachi
Vbr CBO 180
Vbr CEO 140
Max. PD (W) 100
Derate (Amb) (W/°C) 214m
Max. hFE 200
Min hFE 35
Ic Max. (A) 12
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 140 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 35
SKU 82728
Back