| 2SB612A Datasheet |
| Equivalent | 2SB612 | |
| Type | Transistor Silicon PNP | |
| Case | TO3 | |
| Manufacturer | Hitachi | |
| Vbr CBO | 180 | |
| Vbr CEO | 160 | |
| Max. PD (W) | 100 | |
| Derate (Amb) (W/°C) | 214m | |
| Max. hFE | 200 | |
| Min hFE | 35 | |
| Ic Max. (A) | 12 | |
| @Ic (test) (A) | 1.0 | |
| Icbo Max. @Vcb Max. (A) | 10u | |
| Polarity | PNP | |
| Oper. Temp (°C) Max. | 140 | |
| @VCE (V) | 5.0 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 100 W | |
| Maximum Collector-Base Voltage |Vcb| | 180 V | |
| Maximum Collector-Emitter Voltage |Vce| | 140 V | |
| Maximum Emitter-Base Voltage |Veb| | 6 V | |
| Maximum Collector Current |Ic max| | 12 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 35 | |
| SKU | 343645 | |