2SB612A

SKU: 2SB612A

2SB612A Transistor Silicon PNP CASE: TO3 MAKE: Hitachi

Price:

£23.99 Inc. VAT (£19.99 Ex. VAT)

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Datasheet

2SB612A Datasheet

Product specifications

Weight	0.01 kg
Equivalent	2SB612
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	Hitachi
Vbr CBO	180
Vbr CEO	160
Max. PD (W)	100
Derate (Amb) (W/°C)	214m
Max. hFE	200
Min hFE	35
Ic Max. (A)	12
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	180 V
Maximum Collector-Emitter Voltage \|Vce\|	140 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	12 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	35
SKU	343645

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