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2SB650H
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2SB650H

SKU: 2SB650H
2SB650H Transistor Silicon PNP CASE: TO3 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case TO3
Manufacturer Hitachi
Vbr CEO 100
Max. PD (W) 100
Max. hFE 20k
Min hFE 1.0k
Ic Max. (A) 15
@Ic (test) (A) 8.0
Icbo Max. @Vcb Max. (A) 100u
Mat. Silicon Logic
Polarity PNP
R(sat) (Û) 250m
Derate Above 25°C 800m
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-36
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 16 A
Max. Operating Junction Temperature (Tj) 200 °C
Forward Current Transfer Ratio (hFE), MIN 8000
SKU 590769
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